(China (Mainland))
Product Summary
The BGY1816N is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. The BGY1816N consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
Parametrics
BGY1816N absolute maximum ratings: (1)DC supply voltage, VS1: 4.5 to 5.5V; (2)DC supply voltage, VS2: 28V; (3)input drive power, PD: 120mW; (4)load power, Tmb=25℃, PL: 20W; (5)storage temperature, Tstg: -30 to +100℃; (6)operating mounting base temperature, Tmb: -10 to +90℃.
Features
BGY1816N features: (1)26V nominal supply voltage; (2)16W output power into a load of 50W with an RF drive power of 63mW.
Diagrams
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 BGY1085A |
NXP Semiconductors |
RF Amplifier CATV P/P AMP 18.5dB |
Data Sheet |
Negotiable |
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BGY1085A,112 |
NXP Semiconductors |
RF Amplifier CATV P/P AMP 18.5dB |
Data Sheet |
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BGY120A |
Other |
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Data Sheet |
Negotiable |
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BGY120B |
Other |
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Data Sheet |
Negotiable |
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BGY122A |
Other |
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Data Sheet |
Negotiable |
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BGY122B |
Other |
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Data Sheet |
Negotiable |
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