Product Summary
The D1010UK is a gold metallised multi-purpose silicon DMOS RF FET.
Parametrics
D1010UK absolute maximum ratings: (1)Power Dissipation: 350 W; (2)Drain – Source Breakdown Voltage: 70 V; (3)Gate – Source Breakdown Voltage: ±20 V; (4)Drain Current: 20 A; (5)Storage Temperature: -65 to 150 ℃; (6)Maximum Operating Junction Temperature: 200 ℃.
Features
D1010UK features: (1)simplified amplifier design; (2)suitable for broad band applications; (3)low Crss; (4)simple bias circuits; (5)low noise; (6)high gain -10 dB minimum.
Diagrams
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![]() D10129 |
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